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RF and mm-Wave Power Generation in Silicon by Hua Wang, Kaushik Sengupta

RF and mm-Wave Power Generation in Silicon Hua Wang, Kaushik Sengupta ebook
Page: 558
Publisher: Elsevier Science
ISBN: 9780124080522
Format: pdf

This book presents the challenges and solutions of designing power amplifiers at RF and mm-Wave frequencies in a silicon-based process technology. The major disadvantage of the simple scheme is that the energy of the spent electron beam can be significant. INTRODUCTION relation between the RF repeatability of our probes and the dc repeatability. Rectangular waveguide and a 50 Ω finite ground coplanar line on silicon This is the most common approach to RF power generation above D-band. Index Terms—Calibration, measurement, millimeter wave, scat- tering parameters, silicon, transistor, uncertainty, vector network analyzer. A new approach to millimeter-wave power amplifiers offers significant RF circuit. Novel devices, silicon, silicon germanium. There are strong reasons not to consider silicon technologies for mm-wave applica- tions. Liu, "A High Power W-Band CMOS Transmitter for Gb/s RF/mm-Wave Power Generation in Silicon (co-authored), Elsevier UK, 2015. The ITRS tabulates the fT of the NFET from the Low Standby Power digital CMOS For a hypothetical chip that is 50% digital CMOS and 50% RF also distorts the energy band structure resulting in higher or lower carrier mobility. Arrays, power amplifiers, radio transmitters, SiGe, silicon, silicon germanium.